Effect of PbO-B2O3-SiO2 doping on the low-temperature sintering behavior and dielectric properties of Mg4Nb2O9 ceramics
WU Yi, SU Li-na, LIANG Hai-rong, WANG Ya-juan, ZHANG Yu, YANG Jing-na, JING Hui-xia, LIU Peng*
(College of Physics and Information Technology, Shaanxi Normal University, Xi′an 710062, Shaanxi, China)
Abstract:
The microwave dielectric ceramics Mg4Nb2O9 (MN) doped with PbO-B2O3-SiO2 (PBS) is prepared by conventional solid-state reaction method. The sintering behavior, phase component, microstructure and microwave dielectric properties of Mg4Nb2O9 ceramics are investigated. It is found that the sintering temperature of Mg4Nb2O9 ceramics doped with 4.0% PbO-B2O3-SiO2 is lowered from 1 400℃ to 975℃ and the optimum microwave dielectric properties are obtained (εr=13.8,Q×f=37 382 GHz,τf=-169×10-5℃-1) at 975℃ for 5 h.
KeyWords:
phase component; low-temperature sintering; dielectric properties