Using the magnetron sputtering method, La075Na025MnO3 film with the thickness of 120 nm was epitaxially grown on LaAlO3(100) single-crystal substrate. The film was characterized by the X ray diffraction and the Dc four probe method. The X-ray diffraction patterns show that the thin film is a pseudo-cubic perovskite type structure with the epitaxial direction of (100). The resistivity-temperature curve shows that the film undergoes metal-insulator transition at 275 K. The peak resistivity decreases with the increment of the currents between 05~4mA and that of the 159% is obtained at 4mA. The results are reasonably explained by phase-separation theory.

La0.75Na0.25MnO3 epitaxial film; current-induced effect; phase-separation theory