Abstract:
Both Radio frequency-magnetron sputtering (RF-MS) and Electron-beam evaporation (E-BE) methods have been used to fabricate ZnO thin films on glass substrates,respectively The microstructure, optical and electrical properties of both the films after annealed at 400、450 and 500℃ have been compared. It is found that, compared with the filmfabricated by E-BE, the ZnO thin films fabricated by RF-MS has smaller and more homogeneous grain size and thus smaller roughness. Whereas a similar optical behavior is obtained for the films fabricated with both methods, that is, the mean of optical transmissions are all larger than 80%, the band-gaps decrease with the annealing temperature increasing and both exhibit a near band-edge emission near 380 nm and a green light emission. But the resistivity of the ZnO films fabricated by E-BE is smaller than that of the film fabricated by RF-MS.
