LIU Rui-ni1, ZHAO Hua1, CHEN Xiao-bo1, JIAO Hua1, ZHANG Jian-ying1, ZHENG Hai-rong2, ZHANG Xi-sheng2, YANG He-qing1*
(1 Key Laboratory of Macromolecular Science of Shaanxi Province, College of Chemistry and Materials Science; 2 College of Physics and Information Technology, Shaanxi Normal University, Xi′an 710062, Shaanxi, China)
Abstract:
β-Ga2O3 nanowires have been synthesized on the surface of gallium grains through heating gallium grains at 900 ℃ for 3 h in a N2 gas atmosphere. The structure and morphology of the products were characterized by means of Raman spectroscopy, scanning electron microscopy and transmission electron microscopy. The results shows that the β-Ga2O3 nanowires are of single crystalline with a monoclinic structure, their diameter and length are 50-100 nm and 30-100 micrometers, respectively. A possible mechanism was proposed to account for the formation of β-Ga2O3 nanowires. Photoluminescence spectrum of the β-Ga2O3 nanowires was measured at room temperature, and a strong blue photoluminescence with peak at 457 nm originated from the recombination of an electron on an oxygen vacancy and a hole on a gallium-oxygen vacancy pair was observed.
KeyWords:
β-Ga2O3; nanowires; in situ growth; photoluminescence
