LIU Wei, GAO Fei, FANG Xiao-ling, WANG Jian-jun, ZHANG Jia-wen, YAN Chun-yu
(College of Physics and Information Technology, Shaanxi Normal University, Xi′an 710062, Shaanxi, China)
Abstract:
Reports the crystallization of amorphous silicon (a-Si) thin film by aluminum-induced crystallization (AIC) on glass substrates. The influence of annealing temperature and time on the crystalline of the sample are studied by X-ray diffraction(XRD), optical microscope(OM) and atomic force microscopy (AFM). The results show that the sample is still amorphous after annealing at 300℃, and at 400℃ the samples begin to crystallize and both the crystalline volume fraction and size of crystalline grain increase with annealing time increase. However, the roughness of the samples is also increased.
KeyWords:
aluminum-induced crystallization； amorphous silicon thin film； crystalline volume fraction； annealing time
