Abstract:
MgTiTa2O8 microwave dielectric ceramic material has moderate dielectric constant and high Q×f value, but its τf value is too large to be applied in practical devices. Mg(Ti1-xZrx)Ta2O8(x=0.2,0.4,0.6,0.8) microwave dielectric ceramics were prepared by the traditional solid-state reaction method, and the effects of replacing Ti4+ with Zr4+ on the microstructure and microwave dielectric properties of MgTiTa2O8 dielectric ceramics were studied. With the gradual increase of Zr4+ doping, the internal structure of ceramics changes in the following order: tri-rutile structure coexistence of tri-rutile and wolframite structure wolframite structure, and the change of ceramic internal structure will affect the microwave dielectric properties of the materials. Compared with pure MgTiTa2O8 microwave dielectric ceramics, the temperature coefficient of the material is improved to 9.6×10-6 /℃ when x=0.4.MgTi0.6Zr0.4Ta2O8 microwave dielectric ceramics were prepared at the sintering temperature of 1 350 ℃, showing excellent microwave dielectric properties: εr=31，Q×f=30 544 GHz，τf=9.6×10-6/℃.
