Application and quantitative calculation of aberration-corrected high resolution images at picometer precision
LU Jiangbo1*, LIN Yanli1, YANG Yuanxun1, TIAN Chenyang1, ZHANG Yongsen2, ZHU Lujun1, CHEN Xiaoming1, MA Chao2
(1 School of Physics and Information Technology, Shaanxi Normal University,Xi′an 710119, Shaanxi, China;2 College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, China)
Abstract:
In order to obtain the atomic arrangement at picometer scale without artifacts, a series of morphological processing of the high resolution atomic scale images are carried out with numerical program.The center of each atoms is fitted and quantitatively calculated in order to obtain the displacements of polarization and error analysis at picometer level. By using this program, the 90-degree domain structure in ferroelectric thin film PbTiO3 is quantitatively analyzed, and the polarization of single domain and the "head to tail" domain wall at unit cell scale are calculated and illustrated as well. In addition, this approach is further applied to quantitatively analyze the annular bright-field image, and the oxygen octahedral tilting angles in the LaCoO3 thin film can be measured.The present method can obtain microstructure features of materials at picometer scale and calculate them quantitatively.
KeyWords:
high resolution atomic scale image; image processing; quantitative characterization; PbTiO3 domain wall; LaCoO3 thin film
