Influence of magnetron sputtering parameters on the growth of barium strontium titanate thin films and dielectric properties
YANG Jia, ZHANG Yunying, XIE Xiaokang, BIAN Xiaobing, ZHOU Jianping*
(School of Physics and Information Technology, Shaanxi Normal University, Xi′an 710119, Shaanxi, China)
Abstract:
The Ba0.6Sr0.4TiO3 (BST) thin films were deposited on Pt/SiO2/Si substrates by an radio frequency magnetron sputtering.The influence of the ratio of O2 and Ar and pressure on the growth process and dielectric properties of BST thin films are investigated.The process of sputtering atmosphere on the BST film growth is studied with an atomic force microscope (AFM) and an X-ray diffractometer. The dielectric properties of BST films are measured by an Agilent impedance analyzer.The results show that the grain size, crystallinity and dielectric constant of thin films increase with the ratio of O2 and Ar, which decreases the dielectric loss but diminishes the depositing speed at the same time. The increasing of sputtering pressure lead the decrease of the grain size and crystallinity of BST thin films. The growth rate of BST thin films increases first and then decreases with sputtering pressure.
KeyWords:
radio frequency magnetron sputtering; BST thin films; surface morphology; growth rate; dielectric properties
