Abstract:
BST thin films were prepared on Pt/Ti/SiO2/Si substrate by RFmagnetron sputtering. Based on the theory of film nucleation,the surface morphology and dielectric property of film influenced by RF sputtering parameters,such as the sputtering time,substrate temperature,sputtering power,sputtering pressure,ratio of oxygen and argon and annealing heat treatment were investigated.The results show that when others sputtering parameters controls, the film thickness increase in a exponential manner with sputtering time. The BST thin films were crystallized when annealing heat treatment in 20 minutes at 600 ℃. The BST thin films with compact surface, uniform crystalline grain sizes and high dielectric constant, low dielectric loss were obtained by adjusting the sputtering parameters.
